P.M. Smith, K. Nichols, W. Kong, L. MtPleasant, D. Pritchard, R. Lender, J. Fisher, R. Actis, D. Dugas, D. Meharry, A. Swanson
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引用次数: 24
Abstract
This paper presents an overview of the rapid progress being made in the development of InP HEMT devices and circuits for high frequency analog applications. Although widespread use of InP HEMTs has to date been limited by their comparatively high cost, commercialization now appears to be inevitable due to recent progress on two parallel fronts-the development of metamorphic HEMTs (MHEMTs) and the scaling of InP substrates to larger sizes (4- and 6-inch).
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