{"title":"Thermal design and structure of thick film hybrid IC based on insulated aluminium substrate","authors":"N. Sakamoto, T. Kanai, K. Ohkawa","doi":"10.1109/STHERM.1993.225315","DOIUrl":null,"url":null,"abstract":"The structural characteristics of an insulated metal substrate based on aluminum (IMST) and a circuit assembly innovation by IMST (CAIT) mounting technology are discussed. It is shown that IMST has an excellent heat dissipation property, which provides the active and passive elements mounted on this substrate with a very low thermal resistance from them to the substrate. The hybrid IC based on this substrate enables the high density packaging of circuits including power semiconductors. The relationship between the structure and thermal resistance for each circuit component mounted on the IMST substrate is described.<<ETX>>","PeriodicalId":369022,"journal":{"name":"[1993 Proceedings] Ninth Annual IEEE Semiconductor Thermal Measurement and Management Symposium","volume":"132 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-02-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"[1993 Proceedings] Ninth Annual IEEE Semiconductor Thermal Measurement and Management Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/STHERM.1993.225315","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The structural characteristics of an insulated metal substrate based on aluminum (IMST) and a circuit assembly innovation by IMST (CAIT) mounting technology are discussed. It is shown that IMST has an excellent heat dissipation property, which provides the active and passive elements mounted on this substrate with a very low thermal resistance from them to the substrate. The hybrid IC based on this substrate enables the high density packaging of circuits including power semiconductors. The relationship between the structure and thermal resistance for each circuit component mounted on the IMST substrate is described.<>
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