{"title":"Modeling substrate noise generation in CMOS digital integrated circuits","authors":"M. Nagata, T. Morie, A. Iwata","doi":"10.1109/CICC.2002.1012889","DOIUrl":null,"url":null,"abstract":"A time-series divided parasitic capacitance model accurately simulates substrate noise generation of practical CMOS digital integrated circuits in the time domain. The simulation of a 0.25-/spl mu/m z80 microcontroller with 62.5-MHz clock frequency costs less than 10 sec per a clock cycle including the model generation. Simulated substrate noise compares well with 200-ps 100-/spl mu/V resolution measurements in wave-shapes validated for clock frequency up to 125 MHz and shows a peak-amplitude error of less than 2% against supply-voltage scaling from 2.5 V to 1.6 V.","PeriodicalId":209025,"journal":{"name":"Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICC.2002.1012889","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 15
Abstract
A time-series divided parasitic capacitance model accurately simulates substrate noise generation of practical CMOS digital integrated circuits in the time domain. The simulation of a 0.25-/spl mu/m z80 microcontroller with 62.5-MHz clock frequency costs less than 10 sec per a clock cycle including the model generation. Simulated substrate noise compares well with 200-ps 100-/spl mu/V resolution measurements in wave-shapes validated for clock frequency up to 125 MHz and shows a peak-amplitude error of less than 2% against supply-voltage scaling from 2.5 V to 1.6 V.