{"title":"Cat-CVD SiN insulated-gate AlGaN/GaN HFETs with 163 GHz f/sub T/ and 184 GHz f/sub max/","authors":"M. Higashiwaki, T. Matsui, T. Mimura","doi":"10.1109/DRC.2005.1553161","DOIUrl":null,"url":null,"abstract":"In conclusion, we demonstrated AlGaN/GaN HFETs with fT=163 GHz and fmax=184 GHz by using thin, high-Al-composition barrier layers, Cat-CVD SiN gate-insulating and passivation layers, and 60-nm T-gates defined by EB lithography","PeriodicalId":306160,"journal":{"name":"63rd Device Research Conference Digest, 2005. DRC '05.","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"63rd Device Research Conference Digest, 2005. DRC '05.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2005.1553161","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
In conclusion, we demonstrated AlGaN/GaN HFETs with fT=163 GHz and fmax=184 GHz by using thin, high-Al-composition barrier layers, Cat-CVD SiN gate-insulating and passivation layers, and 60-nm T-gates defined by EB lithography
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