{"title":"The optimal conditions of obtaining AlN-layers on sapphire with MBE method","authors":"T. Malin, K. Zhuravlev, V. Mansurov","doi":"10.1109/EDM.2009.5173923","DOIUrl":null,"url":null,"abstract":"In given work the method for growing the AlN layers on sapphire substrate with MBE method from ammonia is considered. An influence of growth conditions on quality of obtaining layers is investigated.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDM.2009.5173923","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In given work the method for growing the AlN layers on sapphire substrate with MBE method from ammonia is considered. An influence of growth conditions on quality of obtaining layers is investigated.
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