{"title":"Analysis of photoluminescent properties of InAs/InGaAsP/InP quantum dots structure","authors":"R. Sato, M. Nakamura, H. Imai","doi":"10.1109/ICIPRM.2013.6562586","DOIUrl":null,"url":null,"abstract":"We measured photoluminescence (PL) spectra of InAs/InGaAsP/InP quantum dots structures. We examined the PL peak shift changing the polarization of excitation light from p-polarization to s-polarization and the excitation light power. From the results, we estimated that the phonon emission according to the increase in TM component of the p-polarization.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2013.6562586","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We measured photoluminescence (PL) spectra of InAs/InGaAsP/InP quantum dots structures. We examined the PL peak shift changing the polarization of excitation light from p-polarization to s-polarization and the excitation light power. From the results, we estimated that the phonon emission according to the increase in TM component of the p-polarization.
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