An equivalent circuit approach to semiconductor device simulation

Abstract

The development of a simulation program based on the equivalent circuit model approach and using symbolic manipulation tools was presented. We have shown that the result from simulation program can be verified with simple analytical expressions. We have also shown that this approach is general in a sense that any arbitrary impurity and recombination center profiles can be used. In this approach, the device is converted to an equivalent circuit. We expect this approach to be useful for mixed circuit and device simulation. Although we have only present the result for DC analysis, the result can easily be extended to transient and small-signal analysis.<>