{"title":"28-nm Bulk and FDSOI Cryogenic MOSFET : (Invited Paper)","authors":"A. Beckers, F. Jazaeri, C. Enz","doi":"10.1109/CICTA.2018.8706117","DOIUrl":null,"url":null,"abstract":"This paper presents an intensive overview of the characterization and modeling of advanced 28-nm bulk and FDSOI CMOS processes operating continuously from room down to deep cryogenic temperature.","PeriodicalId":186840,"journal":{"name":"2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICTA.2018.8706117","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
This paper presents an intensive overview of the characterization and modeling of advanced 28-nm bulk and FDSOI CMOS processes operating continuously from room down to deep cryogenic temperature.
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