Enhancing a current leakage path using a novel dual source heating system

H. Lin, J. Ma
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Abstract

Thermal laser stimulation (TLS) implemented under testing has become an important failure analysis technique for System-on-Chip (SoCs). This technique ensures that devices under testing (DUT) can enter particular modes, which turn on certain circuit blocks when performing TLS. However, from foundry's perspective, TLS operated under testing may not be a cost-effective solution as numerous design and test resources are required. This paper proposes a novel dual source heating system which can localize defects without utilizing any vectors by using a thermal laser in combination with a heating plate connected to a temperature controller. In this study, a defective SoC was globally heated using the heating plate to enhance the leakage path by changing the properties of the chip. Meanwhile, active or passive devices inside the defective SoC were locally heated using the thermal laser to enhance the defect detection capability by changing the electrical behaviors of the active or passive devices. Using this technique, a silicon defect located in an embedded functional circuit block of the defective SoC was successfully isolated without pausing the sample at any certain vectors.
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使用新型双源加热系统增强电流泄漏路径
热激光刺激(TLS)已成为系统级芯片(soc)失效分析的重要技术。该技术确保被测设备(DUT)可以进入特定模式,在执行TLS时打开某些电路块。然而,从代工的角度来看,在测试下运行TLS可能不是一个经济有效的解决方案,因为需要大量的设计和测试资源。本文提出了一种新型的双源加热系统,该系统利用热激光与与温度控制器相连的加热板相结合,可以在不使用任何矢量的情况下对缺陷进行定位。在这项研究中,使用加热板对缺陷SoC进行全局加热,通过改变芯片的性质来增强泄漏路径。同时,利用热激光对缺陷SoC内部的有源或无源器件进行局部加热,通过改变有源或无源器件的电学行为来增强缺陷检测能力。使用该技术,位于有缺陷SoC的嵌入式功能电路块中的硅缺陷被成功隔离,而无需将样品暂停在任何特定向量上。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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