Innovative Buried Layer Rectifier with 0.1V ultralow forward conduction voltage

Abstract

A novel Buried Layer Rectifier (BLR) is proposed and demonstrated, which features P-layers buried under the N-channel to create a barrier for majority carriers whose height can be modulated by the anode voltage. The forward conduction voltage (VF) is considerably reduced due to the ultra-low barrier. The buried P-layers also significantly enhance the blocking capability and reduce the leakage current. Experiments show that the novel 100-V BLR exhibits an ultra-low VF of 0.1V and a fast reverse recovery time (Trr) shorter than 20ns.