Ziyang Chen, Miaocheng Zhang, Zixuan Ding, Aoze Han, Xinavu Chen, Xinpeng Wang, Lei Wang, Haotong Zhang, Yi Tong
{"title":"BaFe12O19 based Ferroelectric Memristor for Applications of True Random Number Generator","authors":"Ziyang Chen, Miaocheng Zhang, Zixuan Ding, Aoze Han, Xinavu Chen, Xinpeng Wang, Lei Wang, Haotong Zhang, Yi Tong","doi":"10.1109/ICTA56932.2022.9963047","DOIUrl":null,"url":null,"abstract":"Ferroelectric memristors are in principle a promising candidate for realizing effective computing in memory, for their advantages of multi-bit storage, ultra-fast switching behavior, and low power consumption. Here, we successfully fabricated the Cu/BaFe12O19/Pt ferroelectric memristive device with multi-resistance state (2 bits), reliable reproducibility (>102), and desired on/off ratio (103). The conductive mechanism of the device is attributed to the variation of ferroelectric barrier, which is verified by first-principle calculations. In addition, based on the randomness of the SET voltage of the devices, we innovatively propose a schematic diagram of true random number generator (TRNG) circuit. This work may pave the way for next-generation ferroelectric memristors and further enable a broad range of multifunctional applications.","PeriodicalId":325602,"journal":{"name":"2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","volume":"87 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICTA56932.2022.9963047","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Ferroelectric memristors are in principle a promising candidate for realizing effective computing in memory, for their advantages of multi-bit storage, ultra-fast switching behavior, and low power consumption. Here, we successfully fabricated the Cu/BaFe12O19/Pt ferroelectric memristive device with multi-resistance state (2 bits), reliable reproducibility (>102), and desired on/off ratio (103). The conductive mechanism of the device is attributed to the variation of ferroelectric barrier, which is verified by first-principle calculations. In addition, based on the randomness of the SET voltage of the devices, we innovatively propose a schematic diagram of true random number generator (TRNG) circuit. This work may pave the way for next-generation ferroelectric memristors and further enable a broad range of multifunctional applications.
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