{"title":"Programmable low dropout voltage regulator","authors":"P. Hasler, A. Low","doi":"10.1109/IWSOC.2005.95","DOIUrl":null,"url":null,"abstract":"We present a design for a low dropout (LDO) voltage regulator is presented using floating-gate techniques to set the regulator output voltage and the ac and dc operating points of the circuit. In comparison with conventional topologies, this approach does not require a feedback resistive divider or a bandgap reference to generate a temperature independent voltage. The use of floating-gates allows the regulator output to be programmed to a desired mode of operation and then stored in a non-volatile manner. Experimental results are presented from a prototype circuit fabricated in MOSIS; this circuit has been functional in 2.0/spl mu/m, 1.2/spl mu/m, and 0.5/spl mu/m processes available through MOSIS.","PeriodicalId":328550,"journal":{"name":"Fifth International Workshop on System-on-Chip for Real-Time Applications (IWSOC'05)","volume":"119 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Fifth International Workshop on System-on-Chip for Real-Time Applications (IWSOC'05)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWSOC.2005.95","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
We present a design for a low dropout (LDO) voltage regulator is presented using floating-gate techniques to set the regulator output voltage and the ac and dc operating points of the circuit. In comparison with conventional topologies, this approach does not require a feedback resistive divider or a bandgap reference to generate a temperature independent voltage. The use of floating-gates allows the regulator output to be programmed to a desired mode of operation and then stored in a non-volatile manner. Experimental results are presented from a prototype circuit fabricated in MOSIS; this circuit has been functional in 2.0/spl mu/m, 1.2/spl mu/m, and 0.5/spl mu/m processes available through MOSIS.