J. Kremmer, I. Hotovy, V. Rehacek, J. Široký, L. Spieß, J. Schawohl
{"title":"Physical and structural characterization of NiO thin films for gas detection","authors":"J. Kremmer, I. Hotovy, V. Rehacek, J. Široký, L. Spieß, J. Schawohl","doi":"10.1109/ASDAM.2000.889513","DOIUrl":null,"url":null,"abstract":"We have studied physical and structural properties of NiO thin films produced by reactive DC magnetron sputtering of a Ni target in an Ar/O/sub 2/ mixture. The oxygen content in the gas mixture varied from 15 to 45%. The thin film deposition was controlled by the target voltage. Depending on the oxygen content, the deposited films have both amorphous and polycrystalline structures and the Ni/O ratio ranges between 0.71 and 1.02. The NiO thin films were tested in order to investigate their response to NH/sub 3/ and CO in the interval 50-200 ppm at the different operating temperatures. The maximum value of CO response (30% to 200 ppm) was obtained at an operating temperature of 420/spl deg/C for sample prepared in oxide-sputtering mode.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"69 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2000.889513","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We have studied physical and structural properties of NiO thin films produced by reactive DC magnetron sputtering of a Ni target in an Ar/O/sub 2/ mixture. The oxygen content in the gas mixture varied from 15 to 45%. The thin film deposition was controlled by the target voltage. Depending on the oxygen content, the deposited films have both amorphous and polycrystalline structures and the Ni/O ratio ranges between 0.71 and 1.02. The NiO thin films were tested in order to investigate their response to NH/sub 3/ and CO in the interval 50-200 ppm at the different operating temperatures. The maximum value of CO response (30% to 200 ppm) was obtained at an operating temperature of 420/spl deg/C for sample prepared in oxide-sputtering mode.