{"title":"A 50W Highly Linear 3-Way Integrated Wideband Doherty PA for Small-Cell Application","authors":"Hao Zhang, S. De Meyer, C. Duvanaud, S. Bachir","doi":"10.23919/EUMC.2018.8541712","DOIUrl":null,"url":null,"abstract":"This article presents the realization and measurement results of a 50W highly linear 3-way integrated Wideband Doherty P A using LDMOS (laterally diffused metal oxide semiconductor) technology. The efficiency / linearity compromise is highly optimized for a power range from 12 dB OBO (output back-off) to 8 dB OBO for the frequency range from 1800 MHz to 2200 MHz. The proposed 3-way integrated combiner uses Cds (drain-to-source capacitance) absorption method to achieve wideband impedance transformation. Linear gain around 16 dB with efficiency >41 %, raw ACPR (Adjacent Channel Power Ratio) of −40dBc was measured at 12 dB back off. At 8 dB back off, efficiency of 45-49% with a raw ACPR< −35 dBc was measured with WCDMA signal. For the optimized Doherty, the measured AMPM(amplitude-to-phase) values at P3dB level has a minimal spread < 5 deg and consistent shape in a fractional bandwidth of 20%. At 39 dBm Pout, 8 dB OBO, the DPA was corrected to <-55 dBc with 60 MHz ISBW in the band B1, B2, B3. The highly linear performance demonstrates that the designed RFIC presents a suitable candidate for multi-band MIMO application for the selected frequency band from 1800 MHz to 2200 MHz.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"10 18","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/EUMC.2018.8541712","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
This article presents the realization and measurement results of a 50W highly linear 3-way integrated Wideband Doherty P A using LDMOS (laterally diffused metal oxide semiconductor) technology. The efficiency / linearity compromise is highly optimized for a power range from 12 dB OBO (output back-off) to 8 dB OBO for the frequency range from 1800 MHz to 2200 MHz. The proposed 3-way integrated combiner uses Cds (drain-to-source capacitance) absorption method to achieve wideband impedance transformation. Linear gain around 16 dB with efficiency >41 %, raw ACPR (Adjacent Channel Power Ratio) of −40dBc was measured at 12 dB back off. At 8 dB back off, efficiency of 45-49% with a raw ACPR< −35 dBc was measured with WCDMA signal. For the optimized Doherty, the measured AMPM(amplitude-to-phase) values at P3dB level has a minimal spread < 5 deg and consistent shape in a fractional bandwidth of 20%. At 39 dBm Pout, 8 dB OBO, the DPA was corrected to <-55 dBc with 60 MHz ISBW in the band B1, B2, B3. The highly linear performance demonstrates that the designed RFIC presents a suitable candidate for multi-band MIMO application for the selected frequency band from 1800 MHz to 2200 MHz.