Characterisation of GaAs pHEMT Transient Thermal Response

B. Schwitter, A. Parker, S. Mahon, M. Heimlich
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引用次数: 2

Abstract

Transient gate resistance thermometry is employed to characterise the time domain response of a GaAs pHEMT under pulsed conditions. Self heating is observed from hundreds of nanoseconds to hundreds of milliseconds. A TFR-heated test structure is used to develop a 3-D finite-element thermal model that scales with power density and gate periphery. Thermal coupling between gate fingers in a multi-finger device is measured, and then further investigated via simulation. The model's application to thermal optimisation of devices and circuits is discussed.
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GaAs pHEMT瞬态热响应的表征
采用瞬态栅极电阻测温法对脉冲条件下GaAs pHEMT的时域响应进行了表征。自加热时间从几百纳秒到几百毫秒不等。采用tfr加热测试结构,建立了随功率密度和栅极外围缩放的三维有限元热模型。对多指器件中门指之间的热耦合进行了测量,并通过仿真进一步研究。讨论了该模型在器件和电路热优化中的应用。
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