Hau-Yuan Huang, Yen-Chieh Huang, Je-Yi Su, N. Su, C. Chiang, Chien-Hung Wu, Shui-Jinn Wang
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引用次数: 2
Abstract
Thin-film transistors were fabricated using amorphous indium gallium zinc oxide (α-IGZO) as channels and high-к material HfSiO as gate dielectric by RF sputtering. The influence of high-к PDA temperature variation on device characteristics was investigated. The bottom-gate low voltage driven (≤ 2 V) TFTs operated in n-type enhancement mode with a field-effect mobility of 12.7cm2/V-s, on-off current ratio of 3×105, threshold voltage of 0.005V, and subthreshold voltage swing of 0.11V/dec.
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