{"title":"Optimization of silicon Spreading-Resistance Temperature sensor","authors":"Bin Li, P. Lai, C. Chan, J. Sin","doi":"10.1109/HKEDM.2000.904207","DOIUrl":null,"url":null,"abstract":"The resistance-temperature (R-T) characteristics of silicon Spreading-Resistance Temperature (SRT) sensor have been investigated. Experiment results show that dimensions of the device structure, substrate doping strongly affect the maximum operating temperature, while processing conditions only have a slight effect. With appropriately small circular n/sup +/ region and high substrate doping, the SRT sensor can function at temperatures up to 400/spl deg/C at a low current of 2 mA.","PeriodicalId":178667,"journal":{"name":"Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HKEDM.2000.904207","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
The resistance-temperature (R-T) characteristics of silicon Spreading-Resistance Temperature (SRT) sensor have been investigated. Experiment results show that dimensions of the device structure, substrate doping strongly affect the maximum operating temperature, while processing conditions only have a slight effect. With appropriately small circular n/sup +/ region and high substrate doping, the SRT sensor can function at temperatures up to 400/spl deg/C at a low current of 2 mA.
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