{"title":"GaxIn1-xSb for high speed transferred electron devices","authors":"M. Kawashima, K. Ohta, S. Kataoka","doi":"10.1109/IEDM.1977.189262","DOIUrl":null,"url":null,"abstract":"Foundamental properties of the transferred electron effect of LPE grown Ga<inf>x</inf>In<inf>1-x</inf>Sb have been measured. Low threshold field, 400-600 V/cm, (0.4 ≤ x ≤ 0.8), low constant domain velocity, 5 × 10<sup>6</sup>cm/sec, (0.55 ≤ x ≤ 0.8 ), and low impact ionization rate in the domain makes this material promising for high speed logic devices. Smaller power-delay poduct, about 1/50 of that of GaAs Gunn logic (20fJ) is expected, using an optimum Ga composition x=0.8.","PeriodicalId":218912,"journal":{"name":"1977 International Electron Devices Meeting","volume":"193 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1977 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1977.189262","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Foundamental properties of the transferred electron effect of LPE grown GaxIn1-xSb have been measured. Low threshold field, 400-600 V/cm, (0.4 ≤ x ≤ 0.8), low constant domain velocity, 5 × 106cm/sec, (0.55 ≤ x ≤ 0.8 ), and low impact ionization rate in the domain makes this material promising for high speed logic devices. Smaller power-delay poduct, about 1/50 of that of GaAs Gunn logic (20fJ) is expected, using an optimum Ga composition x=0.8.
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