{"title":"\"Underground capacitors\"/spl minus/Very efficient decoupling for high performance UHF signal processing ICs","authors":"T. Johansson, L. R. Virtanen, J. Gobbi","doi":"10.1109/EDTC.1994.326807","DOIUrl":null,"url":null,"abstract":"In a modern IC-process, small-value high-quality capacitors can be designed for placement under metal lines using only existing layout layers and no additional processing. These capacitors may be added to each noise generating block to improve decoupling without using additional silicon area or additional processing. We call this trick \"Underground capacitors\" but it works under any wide metal line. Two types of circuits were fabricated using a 0.8 /spl mu/m BiCMOS process with three levels of metallization, characterized and compared in the study: a 32/33 prescaler with internal decoupling capacitors and a 64/65 prescaler with no internal decoupling. The bipolar part of the BiCMOS process was used for the circuit design. The dual-modulus prescaler was chosen as a test vehicle because of its importance for frequency synthesis systems.<<ETX>>","PeriodicalId":244297,"journal":{"name":"Proceedings of European Design and Test Conference EDAC-ETC-EUROASIC","volume":"122 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of European Design and Test Conference EDAC-ETC-EUROASIC","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDTC.1994.326807","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
In a modern IC-process, small-value high-quality capacitors can be designed for placement under metal lines using only existing layout layers and no additional processing. These capacitors may be added to each noise generating block to improve decoupling without using additional silicon area or additional processing. We call this trick "Underground capacitors" but it works under any wide metal line. Two types of circuits were fabricated using a 0.8 /spl mu/m BiCMOS process with three levels of metallization, characterized and compared in the study: a 32/33 prescaler with internal decoupling capacitors and a 64/65 prescaler with no internal decoupling. The bipolar part of the BiCMOS process was used for the circuit design. The dual-modulus prescaler was chosen as a test vehicle because of its importance for frequency synthesis systems.<>
在现代集成电路工艺中,可以设计小值高质量电容器,仅使用现有的布局层,无需额外处理,即可放置在金属线下。这些电容器可以添加到每个噪声产生块以改善去耦,而无需使用额外的硅面积或额外的处理。我们称这种方法为“地下电容器”,但它可以在任何宽的金属线路下工作。采用0.8 /spl μ l /m的BiCMOS工艺和三层金属化工艺制备了两种类型的电路,并对其进行了表征和比较:具有内部去耦电容的32/33预分频器和没有内部去耦的64/65预分频器。利用BiCMOS工艺的双极部分进行电路设计。考虑到双模预分频器在频率合成系统中的重要性,选择双模预分频器作为测试载体。