B. Nelson, D. Umemoto, C. Perry, R. Dixit, B. Allen, M.E. Kim, A. Oki
{"title":"High-linearity, low DC power monolithic GaAs HBT broadband amplifiers to 11 GHz","authors":"B. Nelson, D. Umemoto, C. Perry, R. Dixit, B. Allen, M.E. Kim, A. Oki","doi":"10.1109/MCS.1990.110928","DOIUrl":null,"url":null,"abstract":"Two broadband monolithic amplifiers based on GaAs heterojunction bipolar transistors (HBT) have been developed covering the 0.05-11-GHz frequency band. The hybrid designs reported by B.L. Nelson et al. (1989 IEEE GaAs IC Symp. Digest, Oct. 1989, p.79-82) have been successfully implemented with monolithic microwave IC (MMIC) technology. These amplifiers are the first reported balanced and distributed MMIC HBT amplifiers and represent a significant improvement over MESFET and HEMT approaches in high-linearity, low-DC-power performance for communication and electronic warfare applications. A 5-11-GHz MMIC balanced amplifier designed for high linearity produces +33-dBm third-order output intercept point (IP3) with 7.5-dB associated gain and less than 160-mW DC-power consumption. A 0.05-9-GHz distributed amplifier designed for low DC power and high gain consumes less than 50-mW and provides 6-10-dB gain at nominal bias. Device fabrication and characteristics are described.<<ETX>>","PeriodicalId":388492,"journal":{"name":"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"38","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1990.110928","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 38
Abstract
Two broadband monolithic amplifiers based on GaAs heterojunction bipolar transistors (HBT) have been developed covering the 0.05-11-GHz frequency band. The hybrid designs reported by B.L. Nelson et al. (1989 IEEE GaAs IC Symp. Digest, Oct. 1989, p.79-82) have been successfully implemented with monolithic microwave IC (MMIC) technology. These amplifiers are the first reported balanced and distributed MMIC HBT amplifiers and represent a significant improvement over MESFET and HEMT approaches in high-linearity, low-DC-power performance for communication and electronic warfare applications. A 5-11-GHz MMIC balanced amplifier designed for high linearity produces +33-dBm third-order output intercept point (IP3) with 7.5-dB associated gain and less than 160-mW DC-power consumption. A 0.05-9-GHz distributed amplifier designed for low DC power and high gain consumes less than 50-mW and provides 6-10-dB gain at nominal bias. Device fabrication and characteristics are described.<>
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