Illumination Condition And Mask Bias For 0.18/spl mu/m Pattern With KrF Lithography

H. Tabuchi, Y. Shichijo, I. Okabe, N. Oka, M. Inoue, K. Iguchi
{"title":"Illumination Condition And Mask Bias For 0.18/spl mu/m Pattern With KrF Lithography","authors":"H. Tabuchi, Y. Shichijo, I. Okabe, N. Oka, M. Inoue, K. Iguchi","doi":"10.1109/IMNC.1998.729992","DOIUrl":null,"url":null,"abstract":"1. htroduction KrF excimer laser lithography will be used to manufacture 0.1 8pm design-rule devices, because ArF lithography infrastructure will not be in time for 1999, when SIA roadmap mentions that first 0.18pm products are shipped. Therefore it is necessary to use resolution enhancement technology(RET) together. In this paper the optimization of illumination condition and mask bias with half-tone mask(HTM) d off-axis illumination(OAl), as a result in the line width control and the process rgin of both isolated and dense 0.18pm resist pattern, is reported .","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMNC.1998.729992","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

1. htroduction KrF excimer laser lithography will be used to manufacture 0.1 8pm design-rule devices, because ArF lithography infrastructure will not be in time for 1999, when SIA roadmap mentions that first 0.18pm products are shipped. Therefore it is necessary to use resolution enhancement technology(RET) together. In this paper the optimization of illumination condition and mask bias with half-tone mask(HTM) d off-axis illumination(OAl), as a result in the line width control and the process rgin of both isolated and dense 0.18pm resist pattern, is reported .
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
KrF光刻0.18/spl mu/m图案的光照条件和掩模偏差
1. KrF准分子激光光刻将用于制造0.1 pm设计规则器件,因为ArF光刻基础设施将无法在1999年及时完成,届时SIA路线图提到第一批0.18pm产品将发货。因此,有必要将分辨率增强技术(RET)结合使用。本文报道了利用半色调掩模(HTM)和离轴照明(OAl)对光照条件和掩模偏置进行优化,从而实现0.18pm隔离和密集抗蚀图案的线宽控制和工艺起始。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Effect Of Internal Surface Bondings On The Etching Of SiO2 Aerogel Film Direct Transport Measurements Through An Ensemble Of Inas Self-Assembled Quantum Dots Development Of Silicon Based Inertial Sensor In SAIT Nanometer-scale Lithography Of The Ultrathin Films With Atomic Force Microscopy Fabrication Of Nanometer Scale Structure Using Thin Film Stress
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1