Robust 60 GHz 90nm and 40nm CMOS wideband neutralized amplifiers with 23dB gain 4.6dB NF and 24% PAE

Abstract

A three stage transformer differential cross coupled (CC) LNA and PA with integrated baluns for operation in the 57-66GHz band are presented. The LNA fabricated in a 90nm CMOS process achieves 23dB gain and 4.6dB NF at 13mA and 1.3V supply, with 0.06mm2 in size. The PA, also fabricated in a 90nm CMOS process, has maximum power added efficiency (PAE) of 19.4%, 9.4dBm Psat, and 23dB gain with a 12GHz BW and 0.05mm2 chip size. A 2 stage PA fabricated in a digital 40nm CMOS achieves 19dB gain and a record PAE of 24%. The paper analyzes the advantages of MOScap neutralization feedback compared to metal capacitors and low k transformers for process stability and broadband design. Tuning is added to the CC feedback to compensate for process variations.