Anisotropy and selectivity control of TMAH

Proceedings MEMS 98. IEEE. Eleventh Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.98CH36176 Pub Date : 1998-01-25 DOI:10.1109/MEMSYS.1998.659759

O. Tabata

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引用次数: 17

Abstract

A new approach to control the characteristics of TMAH silicon anisotropic etchant is proposed. The effects of potassium ions on TMAH etching characteristics at a concentration of 20 wt.% and temperature of 80/spl deg/C were investigated. A K/sub 2/CO/sub 3/ additive to the TMAH was used as a potassium ion source. The SiO/sub 2/ etching rate increased with increasing the amount of added K/sub 2/CO/sub 3/. Anisotropic etching characteristics were measured using a wagon wheel pattern. It was observed that the etched wagon wheel pattern changed with increasing the amount of added K/sub 2/CO/sub 3/. This change was caused by a decrease in the etching rate in the silicon <014> direction. From these results, it is concluded that important characteristics of silicon anisotropic etching, such as selectivity to silicon dioxide and anisotropy, can be controlled by adding potassium ions to TMAH solution.

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TMAH的各向异性和选择性控制

提出了一种控制TMAH硅各向异性蚀刻剂特性的新方法。研究了在浓度为20% wt.%、温度为80℃时，钾离子对TMAH刻蚀特性的影响。在TMAH中加入K/sub 2/CO/sub 3/添加剂作为钾离子源。随着K/sub - 2/CO/sub - 3/添加量的增加，SiO/sub - 2/刻蚀速率增加。各向异性蚀刻特性测量采用车轮图案。随着K/sub 2/CO/sub 3/添加量的增加，蚀刻后的车轮花纹发生了变化。这种变化是由硅方向蚀刻速率的降低引起的。由此得出结论，在TMAH溶液中加入钾离子可以控制硅各向异性刻蚀的重要特性，如对二氧化硅的选择性和各向异性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings MEMS 98. IEEE. Eleventh Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.98CH36176

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