{"title":"Self-aligned TiSi/sub 2/Si hetero-nanocrystal nonvolatile memory","authors":"Yan Zhu, D. Zhao, Ruigang Li, Jianlin Liu","doi":"10.1109/DRC.2005.1553075","DOIUrl":null,"url":null,"abstract":"After the proposal of nanocrystal floating gate memory by Tiwari, tremendous effort has been made to improve the device performance of a memory containing nanocrystal floating gate, including semiconductor nanocrystals (Si, Ge et al.), metal dot (W, Ni, Au, Pt, Ag et al.), dielectric nanocrystals (Al<sub>2</sub>O<sub>3</sub>, HfO<sub>2</sub> and Si<sub>4</sub>N<sub>3</sub> et al.) and Ge/Si hetero-nanocrystals. In this work, we will report for the first time titanium silicide/Si hetero-nanocrystal floating gate memory","PeriodicalId":306160,"journal":{"name":"63rd Device Research Conference Digest, 2005. DRC '05.","volume":"138 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"63rd Device Research Conference Digest, 2005. DRC '05.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2005.1553075","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
After the proposal of nanocrystal floating gate memory by Tiwari, tremendous effort has been made to improve the device performance of a memory containing nanocrystal floating gate, including semiconductor nanocrystals (Si, Ge et al.), metal dot (W, Ni, Au, Pt, Ag et al.), dielectric nanocrystals (Al2O3, HfO2 and Si4N3 et al.) and Ge/Si hetero-nanocrystals. In this work, we will report for the first time titanium silicide/Si hetero-nanocrystal floating gate memory