Self-aligned TiSi/sub 2/Si hetero-nanocrystal nonvolatile memory

Yan Zhu, D. Zhao, Ruigang Li, Jianlin Liu
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Abstract

After the proposal of nanocrystal floating gate memory by Tiwari, tremendous effort has been made to improve the device performance of a memory containing nanocrystal floating gate, including semiconductor nanocrystals (Si, Ge et al.), metal dot (W, Ni, Au, Pt, Ag et al.), dielectric nanocrystals (Al2O3, HfO2 and Si4N3 et al.) and Ge/Si hetero-nanocrystals. In this work, we will report for the first time titanium silicide/Si hetero-nanocrystal floating gate memory
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自对准TiSi/ sub2 /Si异质纳米晶非易失性存储器
在Tiwari提出纳米晶浮栅存储器之后,人们为提高包含纳米晶浮栅存储器的器件性能做出了巨大的努力,包括半导体纳米晶(Si, Ge等),金属点(W, Ni, Au, Pt, Ag等),介电纳米晶(Al2O3, HfO2和Si4N3等)和Ge/Si异质纳米晶。在这项工作中,我们将首次报道硅化钛/硅异质纳米晶浮栅存储器
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