Sihyun Kim, D. Kwon, Ryoongbin Lee, D. Kim, Byung-Gook Park
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引用次数: 1
Abstract
The temperature dependence of MOSFET and TFET-based pH sensitive ISFET was investigated through TCAD device simulation. The transfer characteristics and the pH sensitivities of both devices at various temperature were compared. TFET-based ISFET exhibits superior thermal stability in contrast with the MOSFET-based ISFET due to the difference of conduction mechanism.
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