Minimization of the local residual stress in 3DICs by controlling the structures and mechanical properties of 3D interconnections

K. Nakahira, F. Endo, R. Furuya, Ken Suzuki, H. Miura
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引用次数: 1

Abstract

Since the residual stress in a silicon chip mounted in 3D modules causes the degradation of both electrical and mechanical reliability, the dominant factors of the residual stress was investigated by using a finite element method and experiments applying 2-μm long piezoresistance strain gauges. The residual stress and local deformation of the chip were found to vary drastically depending on the mechanical properties of bumps and underfill and bump alignment structures.
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通过控制三维连接件的结构和力学性能实现三维连接件局部残余应力的最小化
采用有限元法和2 μm长压阻应变片的实验方法,研究了影响硅芯片电、机械可靠性的主要因素。研究发现,随着凸点、下填料和凸点排列结构的力学性能的不同,切屑的残余应力和局部变形变化很大。
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Invited talk: Progress in 3D integrated circuits Invited talk: Some challenges in scaling 3D ICs to a broader application set Invited talk: Technology and overview of Sony's 3D stacked CMOS image sensor Minimization of the local residual stress in 3DICs by controlling the structures and mechanical properties of 3D interconnections 3D multiprocessor with 3D NoC architecture based on Tezzaron technology
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