{"title":"Dependence of threshold current density on quantum well composition for compressive strained-layer AlxGayIn1−x−yAs lasers","authors":"D. Sapkota, M. S. Kayastha, K. Wakita","doi":"10.1109/ICIPRM.2010.5516084","DOIUrl":null,"url":null,"abstract":"Separate confinement AlGaInAs/InP compressive strained quantum well lasers especially in the wavelength range of 1.55 μm and 1.3 μm with 7.6 nm well thick have been studied. Threshold current density and emission wavelengths have been calculated as a function of well composition. A minimum of threshold current density of 146 Acm<sup>−2</sup> was obtained for the devices with Al<inf>0.1</inf>Ga<inf>0.16</inf>In<inf>0.74</inf>As well which is the lowest value ever reported at this well composition.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"246 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2010.5516084","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Separate confinement AlGaInAs/InP compressive strained quantum well lasers especially in the wavelength range of 1.55 μm and 1.3 μm with 7.6 nm well thick have been studied. Threshold current density and emission wavelengths have been calculated as a function of well composition. A minimum of threshold current density of 146 Acm−2 was obtained for the devices with Al0.1Ga0.16In0.74As well which is the lowest value ever reported at this well composition.
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