S. Makovejev, B. K. Esfeh, F. Andrieu, J. Raskin, D. Flandre, V. Kilchytska
{"title":"Global variability of UTBB MOSFET in subthreshold","authors":"S. Makovejev, B. K. Esfeh, F. Andrieu, J. Raskin, D. Flandre, V. Kilchytska","doi":"10.1109/S3S.2013.6716585","DOIUrl":null,"url":null,"abstract":"Global variability of UTBB MOSFETs in subthresh-old and off regimes is analyzed. Variability of the off-state drain current, subthreshold slope, DIBL, gate leakage current, threshold voltage and their correlations are considered. It is demonstrated that subthreshold drain current variability is not only dependent on the threshold voltage variability, but the effective body factor (incorporating short-channel effects) must also be taken into account.","PeriodicalId":219932,"journal":{"name":"2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)","volume":" 5","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/S3S.2013.6716585","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Global variability of UTBB MOSFETs in subthresh-old and off regimes is analyzed. Variability of the off-state drain current, subthreshold slope, DIBL, gate leakage current, threshold voltage and their correlations are considered. It is demonstrated that subthreshold drain current variability is not only dependent on the threshold voltage variability, but the effective body factor (incorporating short-channel effects) must also be taken into account.
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