Benchmarking of monolithic 3D integrated MX2 FETs with Si FinFETs

Abstract

In this paper, monolayer transition metal dichalcogenide (MX2) FETs are benchmarked with Si FinFET using energy-delay as figure-of-merits and a physical compact model. The model is validated with the help of both atomistic simulations and experimental data for different materials, without the use of any fitting parameter. Single-gate (SG) and double-gate (DG) MX2 FETs are compared from ON current, device capacitance and energy-delay perspective. DG MX2 FETs perform 25–30% faster than SG MX2 FETs for the same energy consumption in case of dominating wire load. WS2 DG FET shows both better energy and speed among chosen MX2 materials. However, in comparison to FinFET, WS2 DG FETs are shown to be ∼ 35% slower, but more energy efficient. Therefore, to match FinFET's performance with MX2 FETs, monolithic 3D integrated MX2 SG and DG FETs are explored. It is shown that 3–5 stacked WS2 DG FETs are needed to meet N3 FinFET performance.