Variability study of MP18 semi-damascene interconnects with fully self-aligned vias

A. Soussou, G. Marti, Z. Tokei, S. Park, G. Jurczak, B. Vincent
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Abstract

In this work, process modeling was coupled with actual Si data to perform process optimization and control of an 18nm metal pitch (MP18) semi-damascene flow with fully self-aligned vias (FSAV). We explored the impact of process variations and patterning sensitivities on line and via resistances as well as on line capacitance variability. We also benchmarked capacitance variability using partial-airgap and gap fill options. From this study, we have identified significant process parameters and corresponding process windows that need to be controlled to ensure successful manufacturability of the MP18 semi-damascene flow.
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具有完全自对准过孔的MP18半大马士革互连的变异性研究
在这项工作中,将工艺建模与实际Si数据相结合,对18nm金属间距(MP18)带完全自对准通孔(FSAV)的半阻尼流进行工艺优化和控制。我们探索了工艺变化和模式灵敏度对在线和通过电阻以及在线电容变化的影响。我们还使用部分气隙和气隙填充选项对电容可变性进行基准测试。通过这项研究,我们确定了需要控制的重要工艺参数和相应的工艺窗口,以确保MP18半大马士革流的成功可制造性。
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