Photoresponses and Memory Effects in Optoelectronic Synaptic Devices Based on CdSe Quantum Dots and Poly(3-hexylthiophene)

Zhicheng Li, Zhulu Song, Zhaojin Wang, Jiayun Sun, Kai Wang
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引用次数: 1

Abstract

The optical responses and memory effects of photoelectric synaptic devices based on CdSe quantum dots (QDs) and poly(3-hexylthiophene) (P3HT) are studied in this work. Compared with devices only incorporating CdSe QDs, the devices based on CdSe QDs and P3HT exhibit higher photocurrents because the heterojunction formed by CdSe QDs and P3HT enhances the separation of photogenerated excitons, and the loss of excitons in the QDs reduces. In addition, due to the effect of the surface defect trapping charge of CdSe QDs, the photocurrent of the device can still be maintained for more than 100 seconds under the condition of zero gate voltage. Finally, the device can perform each synaptic activity with a low power consumption of 12.9 pJ by adjusting the concentration of QDs.
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基于CdSe量子点和聚(3-己基噻吩)的光电突触器件的光响应和记忆效应
研究了基于CdSe量子点(QDs)和聚(3-己基噻吩)(P3HT)的光电突触器件的光响应和记忆效应。与仅包含CdSe量子点的器件相比,基于CdSe量子点和P3HT的器件表现出更高的光电流,这是因为CdSe量子点和P3HT形成的异质结增强了光生激子的分离,并且减少了量子点中激子的损失。此外,由于CdSe量子点的表面缺陷捕获电荷的作用,在栅电压为零的情况下,器件的光电流仍能保持100秒以上。最后,通过调整量子点的浓度,该器件可以在12.9 pJ的低功耗下完成每个突触活动。
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