{"title":"In-plane Dielectric Characterization of Epitaxial Ba(Zr0.35Ti0.65)O3 Thin Films Grown on LSAT (001)","authors":"P. Yun, D.Y. Wang, Y. Wang, H. Chan","doi":"10.1109/ISAF.2007.4393221","DOIUrl":null,"url":null,"abstract":"Ba(Zr<sub>0.35</sub>Ti<sub>0.65</sub>)O<sub>3</sub> (BZT) thin film was deposited on (LaAlO<sub>3</sub>)O<sub>3</sub>(Sr<sub>2</sub>AlTaO<sub>6</sub>)<sub>0.35</sub> [LSAT] (001) single crystal substrate using pulsed laser deposition. The X-ray diffraction pattern reveals an epitaxial growth of the film with a pure perovskite phase. The in-plane dielectric properties of the Ba(Zr<sub>0.35</sub>Ti<sub>0.65</sub>)O<sub>3</sub> thin film was characterized as a function of frequency (1 kHz -1 GHz), temperature (-130degC-100degC) and dc electric field (0-13.3 V/mum) using gold interdigital electrodes. The relative permittivity of the film exhibits strong dependence of the dc bias field over the whole frequency range. The relative permittivity has a high tunability of 60% -31.2% at room temperature in the frequency range of 1 kHz to 1 GHz, showing the potential of our Ba(Zr<sub>0.35</sub>Ti<sub>0.65</sub>)O<sub>3</sub> thin film to be used in microwave devices.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAF.2007.4393221","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Ba(Zr0.35Ti0.65)O3 (BZT) thin film was deposited on (LaAlO3)O3(Sr2AlTaO6)0.35 [LSAT] (001) single crystal substrate using pulsed laser deposition. The X-ray diffraction pattern reveals an epitaxial growth of the film with a pure perovskite phase. The in-plane dielectric properties of the Ba(Zr0.35Ti0.65)O3 thin film was characterized as a function of frequency (1 kHz -1 GHz), temperature (-130degC-100degC) and dc electric field (0-13.3 V/mum) using gold interdigital electrodes. The relative permittivity of the film exhibits strong dependence of the dc bias field over the whole frequency range. The relative permittivity has a high tunability of 60% -31.2% at room temperature in the frequency range of 1 kHz to 1 GHz, showing the potential of our Ba(Zr0.35Ti0.65)O3 thin film to be used in microwave devices.
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