{"title":"Preparation and Properties of Lithium-doped K0.5Na0.5NbO3 Thin Films by Chemical Solution Deposition","authors":"H. Maiwa, T. Kogure, K. Ishizaka, T. Hayashi","doi":"10.1080/10584580701756631","DOIUrl":null,"url":null,"abstract":"Lithium doped K0.5Na0.5NbO3 films were fabricated by chemical solution deposition on Pt/TiO2/SiO2/Si substrates. Homogeneous and stable precursor solutions were prepared by controlling the reaction of starting metal alkoxides. Perovskite KNN single phase thin films were successfully synthesized on Pt/TiOx/SiO2/Si substrates. The 1.2 mum-thick KLNN film annealed at 650degC exhibited a ferroelectric polarization hysteresis loops at -250degC. The loop at room temperature is round in shape indicating the film contains leakage components. Dielectric constant under zero bias is 490 at room temperature. Typical upside-down butterfly DC bias-capacitance curve was obtained in the KLNN film capacitors at room temperature, indicating polarization reversal occurs in the obtained KLNN films.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1080/10584580701756631","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
Lithium doped K0.5Na0.5NbO3 films were fabricated by chemical solution deposition on Pt/TiO2/SiO2/Si substrates. Homogeneous and stable precursor solutions were prepared by controlling the reaction of starting metal alkoxides. Perovskite KNN single phase thin films were successfully synthesized on Pt/TiOx/SiO2/Si substrates. The 1.2 mum-thick KLNN film annealed at 650degC exhibited a ferroelectric polarization hysteresis loops at -250degC. The loop at room temperature is round in shape indicating the film contains leakage components. Dielectric constant under zero bias is 490 at room temperature. Typical upside-down butterfly DC bias-capacitance curve was obtained in the KLNN film capacitors at room temperature, indicating polarization reversal occurs in the obtained KLNN films.