Pub Date : 2007-12-11DOI: 10.1080/10584580701756631
H. Maiwa, T. Kogure, K. Ishizaka, T. Hayashi
Lithium doped K0.5Na0.5NbO3 films were fabricated by chemical solution deposition on Pt/TiO2/SiO2/Si substrates. Homogeneous and stable precursor solutions were prepared by controlling the reaction of starting metal alkoxides. Perovskite KNN single phase thin films were successfully synthesized on Pt/TiOx/SiO2/Si substrates. The 1.2 mum-thick KLNN film annealed at 650degC exhibited a ferroelectric polarization hysteresis loops at -250degC. The loop at room temperature is round in shape indicating the film contains leakage components. Dielectric constant under zero bias is 490 at room temperature. Typical upside-down butterfly DC bias-capacitance curve was obtained in the KLNN film capacitors at room temperature, indicating polarization reversal occurs in the obtained KLNN films.
{"title":"Preparation and Properties of Lithium-doped K0.5Na0.5NbO3 Thin Films by Chemical Solution Deposition","authors":"H. Maiwa, T. Kogure, K. Ishizaka, T. Hayashi","doi":"10.1080/10584580701756631","DOIUrl":"https://doi.org/10.1080/10584580701756631","url":null,"abstract":"Lithium doped K0.5Na0.5NbO3 films were fabricated by chemical solution deposition on Pt/TiO2/SiO2/Si substrates. Homogeneous and stable precursor solutions were prepared by controlling the reaction of starting metal alkoxides. Perovskite KNN single phase thin films were successfully synthesized on Pt/TiOx/SiO2/Si substrates. The 1.2 mum-thick KLNN film annealed at 650degC exhibited a ferroelectric polarization hysteresis loops at -250degC. The loop at room temperature is round in shape indicating the film contains leakage components. Dielectric constant under zero bias is 490 at room temperature. Typical upside-down butterfly DC bias-capacitance curve was obtained in the KLNN film capacitors at room temperature, indicating polarization reversal occurs in the obtained KLNN films.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133551898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-12-04DOI: 10.1109/ISAF.2007.4393340
T. Kuze, H. Takeda, T. Nishida, K. Uchiyama, T. Shiosaki
Al-substituted La3Nb0.5Ga5.5O14 (La3Nb0.5Ga5.5-xAlxO14; LNGAx) single crystals were synthesized by the conventional Czochralski technique. The solubility limit of x=0.2 have been grown The electric properties of the LNGAx crystals were investigated and compared with those of LNG. By Al substitution, the electromechanical coupling factors (k12) became slightly larger. The LNGAx crystals showed a lower temperature dependence of d11 and a higher electric resistivity rho than those of the LNG crystals.
{"title":"Synthesis and Electric Properties of Alminum Substituted Langasite-type La3Nb0.5Ga5.5O14 Single Crystals","authors":"T. Kuze, H. Takeda, T. Nishida, K. Uchiyama, T. Shiosaki","doi":"10.1109/ISAF.2007.4393340","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393340","url":null,"abstract":"Al-substituted La<sub>3</sub>Nb<sub>0.5</sub>Ga<sub>5.5</sub>O<sub>14</sub> (La<sub>3</sub>Nb<sub>0.5</sub>Ga<sub>5.5-x</sub>Al<sub>x</sub>O<sub>14</sub>; LNGA<sub>x</sub>) single crystals were synthesized by the conventional Czochralski technique. The solubility limit of x=0.2 have been grown The electric properties of the LNGAx crystals were investigated and compared with those of LNG. By Al substitution, the electromechanical coupling factors (k<sub>12</sub>) became slightly larger. The LNGAx crystals showed a lower temperature dependence of d<sub>11</sub> and a higher electric resistivity rho than those of the LNG crystals.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114204355","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-12-04DOI: 10.1109/ISAF.2007.4393316
A. Kan, H. Ogawa
The (Mg4-xMx)(Nb2-yAy)O9 (M=Mn, Co, and Zn, A=Ta and Sb) compound with corundum structure were prepared and the microwave dielectric properties, crystal structure and covalency of cation-oxygen bonds of the compounds were investigated in this study. The global instability index (GII) of (Mg4-xMx)Nb2O9 compounds was higher than that of Mg4(Nb2-yAy)O9 compounds and the GIl values of (Mg4-xMx)Nb2O9 compounds increased with increasing the composition x. From the calculation of cation-oxygen bonds, it was found covalency of M-O bond in the (Mg4-xMx)Nb2O9 compounds decreased, depending on the composition. The dielectric constant of the compounds ranged from 11 to 16 by the M substitutions for Mg, whereas the quality factor (Q f) drastically decreased form 210000 to 5000 GHz. On the other hand, the A substitution for Nb enhanced the increase in the Q f value of the compounds; the highest value was 347000 GHz.
{"title":"Microwave Dielectric Properties of Corundum-Structured (Mg4-xMx)(Nb2-yAy)O9 (M=Mn, Co, and Zn, A=Ta and Sb) Ceramics","authors":"A. Kan, H. Ogawa","doi":"10.1109/ISAF.2007.4393316","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393316","url":null,"abstract":"The (Mg<sub>4</sub> <sub>-x</sub>M<sub>x</sub>)(Nb<sub>2-y</sub>A<sub>y</sub>)O<sub>9</sub> (M=Mn, Co, and Zn, A=Ta and Sb) compound with corundum structure were prepared and the microwave dielectric properties, crystal structure and covalency of cation-oxygen bonds of the compounds were investigated in this study. The global instability index (GII) of (Mg<sub>4-x</sub>M<sub>x</sub>)Nb<sub>2</sub>O<sub>9</sub> compounds was higher than that of Mg<sub>4</sub>(Nb<sub>2-y</sub>A<sub>y</sub>)O<sub>9</sub> compounds and the GIl values of (Mg<sub>4-x</sub>M<sub>x</sub>)Nb<sub>2</sub>O<sub>9</sub> compounds increased with increasing the composition x. From the calculation of cation-oxygen bonds, it was found covalency of M-O bond in the (Mg<sub>4-x</sub>M<sub>x</sub>)Nb<sub>2</sub>O<sub>9</sub> compounds decreased, depending on the composition. The dielectric constant of the compounds ranged from 11 to 16 by the M substitutions for Mg, whereas the quality factor (Q f) drastically decreased form 210000 to 5000 GHz. On the other hand, the A substitution for Nb enhanced the increase in the Q f value of the compounds; the highest value was 347000 GHz.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125991708","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393170
D. Brauhaus, P. Schorn, U. Bottger, R. Waser
Fatigue is a commonly known failure mechanism in Pt/PZT/Pt thin film capacitors. The remnant polarization shows a fast drop after 105 to 106 bipolar switching cycles. The reason for this loss of switchable polarization is mainly unknown. We studied the influence of the used switching signal, especially the influence of its shape. A great number of fatigue measurements had to be taken to get reliable data. In order to reduce the measuring time a way to extrapolate the fatigue curve by one decade is introduced and show to be accurate with an error of below 1%. It is also shown that the leading edge of the switching signal has an influence on the fatigue behavior of Pt/PZT/Pt thin films.
{"title":"Signal Form Influences on the Fatigue Behavior of PZT Thin Film Capacitors","authors":"D. Brauhaus, P. Schorn, U. Bottger, R. Waser","doi":"10.1109/ISAF.2007.4393170","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393170","url":null,"abstract":"Fatigue is a commonly known failure mechanism in Pt/PZT/Pt thin film capacitors. The remnant polarization shows a fast drop after 105 to 106 bipolar switching cycles. The reason for this loss of switchable polarization is mainly unknown. We studied the influence of the used switching signal, especially the influence of its shape. A great number of fatigue measurements had to be taken to get reliable data. In order to reduce the measuring time a way to extrapolate the fatigue curve by one decade is introduced and show to be accurate with an error of below 1%. It is also shown that the leading edge of the switching signal has an influence on the fatigue behavior of Pt/PZT/Pt thin films.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"153 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123090261","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393403
D. Jeong, H. Song, Hyeong-Chan Kim, C. Kang, Hyun-Jai Kim, Seok-Jin Yoon
Energy harvesting from the vibration through the piezoelectric effect has been studied for powering the wireless sensor node. As piezoelectric unimorph transducer structure can transfer low vibration to large displacement, this structure was commonly deployed to harvest electric energy from vibrations. Piezoelectric unimorph structure was composed of small stiff piezoelectric ceramic on the large flexible substrate. As there is the large Young's modulus difference between the flexible substrate and stiff piezoelectric ceramic, flexible substrate could not homogeneously transfer the vibration to the stiff piezoelectric ceramic. As a result, most piezoelectric ceramics had been broken at the certain point. Even though the same stress was applied to unimorph cantilever at the end of the unimorph cantilever, there was the difference in output voltages depending on the potion of ceramics. The ratio of the lowest and highest voltage was around 2.4, which reveals the inhomogeneous stress distribution in ceramics.
{"title":"Analysis of Inhomogeneous Stress Distribution in the Piezoelectric Ceramics of Unimorph Cantilever for Energy Harvesting","authors":"D. Jeong, H. Song, Hyeong-Chan Kim, C. Kang, Hyun-Jai Kim, Seok-Jin Yoon","doi":"10.1109/ISAF.2007.4393403","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393403","url":null,"abstract":"Energy harvesting from the vibration through the piezoelectric effect has been studied for powering the wireless sensor node. As piezoelectric unimorph transducer structure can transfer low vibration to large displacement, this structure was commonly deployed to harvest electric energy from vibrations. Piezoelectric unimorph structure was composed of small stiff piezoelectric ceramic on the large flexible substrate. As there is the large Young's modulus difference between the flexible substrate and stiff piezoelectric ceramic, flexible substrate could not homogeneously transfer the vibration to the stiff piezoelectric ceramic. As a result, most piezoelectric ceramics had been broken at the certain point. Even though the same stress was applied to unimorph cantilever at the end of the unimorph cantilever, there was the difference in output voltages depending on the potion of ceramics. The ratio of the lowest and highest voltage was around 2.4, which reveals the inhomogeneous stress distribution in ceramics.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121227755","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393192
N. Zhong, T. Shoisaki
Dielectric measurement was carried out on fatigued Bi4-xLaxTi3O12 ferroelectric films. It is found that the dielectric permittivity varies with switching cycles. With the increase of the switching cycles, the dielectric permittivity exhibits a continuous decrease. This decrease is pronounced for BiT films with low concentration of La, while it is slight for Bi4-xLaxTi3O12 films with high concentration of La. Dielectric permittivity was also measured on Bi4-xLaxTi3O12 ferroelectric films fatigue at different frequencies 50 kHz and 20 kHz. It exhibits that the decrease of dielectric permittivity is pronounced if the films were fatigued at low frequency, while this decrease is slight if the films were fatigue at high frequency. It is proposed that a growing of an interface layer appears during the fatigue process.
{"title":"Dielectric characteristic of fatigued Bi4-xLaxTi3O12 ferroelectric films","authors":"N. Zhong, T. Shoisaki","doi":"10.1109/ISAF.2007.4393192","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393192","url":null,"abstract":"Dielectric measurement was carried out on fatigued Bi<sub>4-x</sub>La<sub>x</sub>Ti<sub>3</sub>O<sub>12</sub> ferroelectric films. It is found that the dielectric permittivity varies with switching cycles. With the increase of the switching cycles, the dielectric permittivity exhibits a continuous decrease. This decrease is pronounced for BiT films with low concentration of La, while it is slight for Bi<sub>4-x</sub>La<sub>x</sub>Ti<sub>3</sub>O<sub>12</sub> films with high concentration of La. Dielectric permittivity was also measured on Bi<sub>4-x</sub>La<sub>x</sub>Ti<sub>3</sub>O<sub>12</sub> ferroelectric films fatigue at different frequencies 50 kHz and 20 kHz. It exhibits that the decrease of dielectric permittivity is pronounced if the films were fatigued at low frequency, while this decrease is slight if the films were fatigue at high frequency. It is proposed that a growing of an interface layer appears during the fatigue process.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"321 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125059234","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393278
T. Comyn, A. Bell
BiFeO3 -PbTiO3 (BFPT) based materials have received interest as high temperature piezoelectrics due to an extremely high Tc of 632degC, and a spontaneous strain >18%; this high strain makes these materials extremely difficult to pole. Doping with small concentrations of La allows materials to be prepared with a d33 > 100 pm V-1 whilst maintaining a Tc > 450degC. Presented here are results from a Rayleigh analysis of these materials which shows that the extrinsic contribution to the piezoelectric effect is extremely low, providing Rayleigh coefficients (alphad) between 4.2 and 6.3 times 10-18 m2V-2, considerably lower than that observed in PZT. The huge deviation from observations in PZT and BiFeO3 -PbTiO3 outline considerable domain wall locking in BFPT, which has a detrimental effect on the piezoelectric activity in this system.
{"title":"Study of intrinsic / extrinsic piezoelectric contributions in La-doped BiFeO3 - PbTiO3 ceramics using the Rayleigh method","authors":"T. Comyn, A. Bell","doi":"10.1109/ISAF.2007.4393278","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393278","url":null,"abstract":"BiFeO<sub>3</sub> -PbTiO<sub>3</sub> (BFPT) based materials have received interest as high temperature piezoelectrics due to an extremely high Tc of 632degC, and a spontaneous strain >18%; this high strain makes these materials extremely difficult to pole. Doping with small concentrations of La allows materials to be prepared with a d<sub>33</sub> > 100 pm V<sup>-1</sup> whilst maintaining a T<sub>c</sub> > 450degC. Presented here are results from a Rayleigh analysis of these materials which shows that the extrinsic contribution to the piezoelectric effect is extremely low, providing Rayleigh coefficients (alpha<sub>d</sub>) between 4.2 and 6.3 times 10<sup>-18</sup> m<sup>2</sup>V<sup>-2</sup>, considerably lower than that observed in PZT. The huge deviation from observations in PZT and BiFeO<sub>3</sub> -PbTiO<sub>3</sub> outline considerable domain wall locking in BFPT, which has a detrimental effect on the piezoelectric activity in this system.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125068553","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393260
A. Artemev, A. Roytburd, J. Slutsker
Phase field simulations were used to study domain structures in model systems containing homogeneous or bi-layer ferroelectric films with different chemical free energy density profiles and different relative strength of dipole-dipole and elastic interactions.
{"title":"Phase Field Modeling of Domain Structures in Ferroelectric Thin Films and Multilayers","authors":"A. Artemev, A. Roytburd, J. Slutsker","doi":"10.1109/ISAF.2007.4393260","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393260","url":null,"abstract":"Phase field simulations were used to study domain structures in model systems containing homogeneous or bi-layer ferroelectric films with different chemical free energy density profiles and different relative strength of dipole-dipole and elastic interactions.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122679948","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393175
H. Shima, K. Nishida, H. Funakubo, T. Iijima, T. Katoda, H. Naganuma, S. Okamura
The systematic investigation of the influence of Pb and La contents on the lattice configuration in La-substituted Pb(Zr0.65,Ti0.35)O3 (La-PZT) films was carried out. La-PZT films with various La and Pb contents were fabricated on Pt/Ti/SiO2/Si substrates by chemical solution deposition (CSD). In the La-PZT films with a Pb content ratio of 125% relative to a stoichiometric value, La ions were substituted for not only A-site ions but also B-site ions at La contents over 3 mol%. La substitution for B-site seems to cause larger reduction of the unit cell size. In addition, we found that in the La-PZT films with a La content of 3 mol%, the Pb content of 116 mol% (120% relative to a stoichiometric value) was optimum from the view point of site occupancy. This suggests that excess Pb prevented the A-site substitution of La ions.
{"title":"Influence of Pb and La Contents on the Lattice Configuration of La-Substituted Pb(Zr0.65, Ti0.35)O3 Films","authors":"H. Shima, K. Nishida, H. Funakubo, T. Iijima, T. Katoda, H. Naganuma, S. Okamura","doi":"10.1109/ISAF.2007.4393175","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393175","url":null,"abstract":"The systematic investigation of the influence of Pb and La contents on the lattice configuration in La-substituted Pb(Zr0.65,Ti0.35)O3 (La-PZT) films was carried out. La-PZT films with various La and Pb contents were fabricated on Pt/Ti/SiO2/Si substrates by chemical solution deposition (CSD). In the La-PZT films with a Pb content ratio of 125% relative to a stoichiometric value, La ions were substituted for not only A-site ions but also B-site ions at La contents over 3 mol%. La substitution for B-site seems to cause larger reduction of the unit cell size. In addition, we found that in the La-PZT films with a La content of 3 mol%, the Pb content of 116 mol% (120% relative to a stoichiometric value) was optimum from the view point of site occupancy. This suggests that excess Pb prevented the A-site substitution of La ions.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129311869","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393369
J. Ryu, Jong‐Jin Choi, B. Hahn, Dong-Soo Park, W. Yoon
The effect of K1.94Zn1.06Ta5.19O15 addition on the sintering behavior and piezoelectric properties in lead-free, piezoelectric ceramics of (K0.5Na0.5)NbO3 was investigated. The apparent density of sintered KNN ceramics was increased with KZT addition, and a relative density of above 96.5% was obtained with the doping of over 0.5 mol% KZT. The maximum dielectric and piezoelectric properties of epsivT3/epsiv0 = 590, d33 = 126 pC/N, kp = 0.42, and Pr = 18 muC/cm3 were obtained from 0.5 mol% KZT-doped KNN ceramics. A small amount of KZT (~0.5 mol%) was effective for improving the sintering behavior and piezoelectric properties, but KZT addition exceeding 1.0 mol% was only effective for densification.
{"title":"Effect of K1.94Zn1.06Ta5.19O15 Addition on the Sintering Behaviors and Piezoelectric Properties of (K0.5Na0.5) NbO3 Ceramics","authors":"J. Ryu, Jong‐Jin Choi, B. Hahn, Dong-Soo Park, W. Yoon","doi":"10.1109/ISAF.2007.4393369","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393369","url":null,"abstract":"The effect of K<sub>1.94</sub>Zn<sub>1.06</sub>Ta<sub>5.19</sub>O<sub>15</sub> addition on the sintering behavior and piezoelectric properties in lead-free, piezoelectric ceramics of (K<sub>0.5</sub>Na<sub>0.5</sub>)NbO<sub>3</sub> was investigated. The apparent density of sintered KNN ceramics was increased with KZT addition, and a relative density of above 96.5% was obtained with the doping of over 0.5 mol% KZT. The maximum dielectric and piezoelectric properties of epsiv<sub>T</sub> <sup>3</sup>/epsiv<sub>0</sub> = 590, d<sub>33</sub> = 126 pC/N, k<sub>p</sub> = 0.42, and P<sub>r</sub> = 18 muC/cm<sup>3</sup> were obtained from 0.5 mol% KZT-doped KNN ceramics. A small amount of KZT (~0.5 mol%) was effective for improving the sintering behavior and piezoelectric properties, but KZT addition exceeding 1.0 mol% was only effective for densification.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"197 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129478267","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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