E. Yanokura, T. Seki, I. Takei, Y. Maruyama, Y. Fujita, M. Katsueda, I. Yoshida, M. Ohnishi, K. Sekine
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引用次数: 4
Abstract
We have developed a highly efficient Si power MOSFET that can operate at 1.5 GHz. This device has a double-ion-implanted layer in an offset region which achieves high drain current density as well as high breakdown voltage. It also has a 0.8-/spl mu/m Mo gate structure for high-frequency operation. In addition, we have successfully designed an internal matching circuit that overcomes the impedance-lowering problem of high-power MOSFETs operated at over 1 GHz. As a result, we obtain an output power of 35 W and a power-added efficiency of 50%, with excellent linearity of power gain.
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