Optical absorption, photoionization and binding energy of shallow donor impurity in spherical multilayered quantum dot

V. Holovatsky, N. Holovatska, M. Chubrei
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Abstract

Energy spectrum, wave functions and binding energies of the electron to the donor impurity ion located in the center of a multilayer spherical quantum dot (MSQD) consisting of a core (GaAs) and two spherical shells (AlxGa1–xAs and GaAs) were studied within the effective mass approximation. The magnetic field influence on the energy spectrum and wave functions of the electron is calculated by the diagonalization method. It is shown that the decrease of the external shell thickness as well as the increase of the magnetic field induction changes the electron localization in the nanosystem and it significantly affects the binding energy of the electron with the impurity, photoionization cross section (PCS) and intersubband absorption coefficient. The position of the PCS peak associated with the quantum transition of an electron from the ground state to the 1p0 state shifts to the region of higher energies, and its height decreases. At the same time, the height of PCS peaks associated with quantum transitions to higher excited states increases.
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球形多层量子点中浅层给体杂质的光吸收、光电离和结合能
在有效质量近似下,研究了由一个核心(GaAs)和两个球壳(AlxGa1-xAs和GaAs)组成的多层球形量子点(MSQD)中心的电子与给体杂质离子的能谱、波函数和结合能。用对角化方法计算了磁场对电子能谱和波函数的影响。结果表明,外层厚度的减小和磁场感应强度的增大改变了电子在纳米体系中的定位,并显著影响了电子与杂质的结合能、光离截面(PCS)和子带间吸收系数。与电子从基态到1p0态的量子跃迁相关的PCS峰的位置向高能区移动,其高度降低。与此同时,与量子跃迁到更高激发态相关的PCS峰的高度增加。
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