Si-on-insulator grating coupler operating at 2 μιη: Device design, fabrication, and characterization

Shengqiang Xu, Xin Guo, Yuan Dong, Wei Wang, Hong Wang, X. Gong, Y. Yeo
{"title":"Si-on-insulator grating coupler operating at 2 μιη: Device design, fabrication, and characterization","authors":"Shengqiang Xu, Xin Guo, Yuan Dong, Wei Wang, Hong Wang, X. Gong, Y. Yeo","doi":"10.23919/SNW.2017.8242318","DOIUrl":null,"url":null,"abstract":"Grating coupler based on 220 nm Si-on-insulator (SOI) substrate was designed and optimized for operation at 2 μm wavelength targeting telecommunication application. Decent coupling efficiency of around 18% is achieved, which is consistent with the simulation results and can be employed in 2 μτη-based photonic integrated circuit.","PeriodicalId":424135,"journal":{"name":"2017 Silicon Nanoelectronics Workshop (SNW)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 Silicon Nanoelectronics Workshop (SNW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/SNW.2017.8242318","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

Grating coupler based on 220 nm Si-on-insulator (SOI) substrate was designed and optimized for operation at 2 μm wavelength targeting telecommunication application. Decent coupling efficiency of around 18% is achieved, which is consistent with the simulation results and can be employed in 2 μτη-based photonic integrated circuit.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
在2 μιη下工作的绝缘体上硅光栅耦合器:器件设计、制造和表征
针对通信应用,设计并优化了基于220nm绝缘体硅基板的2 μm波长光栅耦合器。耦合效率约为18%,与仿真结果一致,可用于基于2 μτη的光子集成电路。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Revisiting room-temperature 1.54 μιη photoluminescence of ErOx centers in silicon at extremely low concentration Undoped SiGe FETs with metal-insulator-semiconductor contacts Improved electrical characteristics and reliability of multi-stacking PNPN junctionless transistors using channel depletion effect Program/erase speed and data retention trade-off in negative capacitance versatile memory Investigations on dynamic characteristics of ferroelectric Hf02 based on multi-domain interaction model
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1