Denis V. Ischenko, A. Klimov, N. S. Paschin, V. Shumsky
{"title":"Transient injection currents in PbSnTe:In films","authors":"Denis V. Ischenko, A. Klimov, N. S. Paschin, V. Shumsky","doi":"10.1109/EDM.2009.5173944","DOIUrl":null,"url":null,"abstract":"In the present paper, experimental data and an analysis of dark transient injection currents in PbSnTe:In films at helium temperature are presented.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDM.2009.5173944","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
In the present paper, experimental data and an analysis of dark transient injection currents in PbSnTe:In films at helium temperature are presented.
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