Han Dejun, K.T. Chan, Li Guohui, Wang Wen-xun, E. Zhu
{"title":"A semi-insulating/n/sup +/-structure in GaAs substrates by high energy implantation","authors":"Han Dejun, K.T. Chan, Li Guohui, Wang Wen-xun, E. Zhu","doi":"10.1109/HKEDM.1994.395130","DOIUrl":null,"url":null,"abstract":"A structure that consists of a semi-insulating layer over a buried n/sup +/ layer (SI/n/sup +/) has been obtained by MeV Si/sup +/ implantation into SI-GaAs substrates and subsequently tailored by a very low dose O/sup +/ implantation. This novel structure has been studied by measurements of current-voltage characteristics, electrochemical C-V profiling and Hall effects. The results indicate that this structure is suitable for the provision of isolation, the fabrication of active devices and internal interconnections.<<ETX>>","PeriodicalId":206109,"journal":{"name":"1994 IEEE Hong Kong Electron Devices Meeting","volume":"283 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1994 IEEE Hong Kong Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HKEDM.1994.395130","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A structure that consists of a semi-insulating layer over a buried n/sup +/ layer (SI/n/sup +/) has been obtained by MeV Si/sup +/ implantation into SI-GaAs substrates and subsequently tailored by a very low dose O/sup +/ implantation. This novel structure has been studied by measurements of current-voltage characteristics, electrochemical C-V profiling and Hall effects. The results indicate that this structure is suitable for the provision of isolation, the fabrication of active devices and internal interconnections.<>
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