M. Sumitomo, J. Asai, H. Sakane, K. Arakawa, Y. Higuchi, M. Matsui
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引用次数: 90
Abstract
A PNM (Partially Narrow Mesa) -IGBT with a fundamentally new surface is proposed for the first time. The unique gate shape looks like a “vase” and generates an extreme injection enhancement. Its performance approaches the limits of Si-IGBT. Therefore, PNM-IGBT is able to contribute to the saturation voltage reduction and the improvement of Vce(sat)-Eoff trade off. Furthermore, it can be adapted to actual conditions because of its sufficiently rugged structure.
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