High reliability of 0.1 /spl mu/m InGaAs/InAlAs/InP HEMT MMICs on 3-inch InP production process

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) Pub Date : 2001-10-21 DOI:10.1109/GAAS.2001.964372

Y. Chou, D. Leung, R. Lai, J. Scarpulla, M. Barsky, R. Grundbacher, D. Eng, P. Liu, A. Oki, D. Streit

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引用次数: 4

Abstract

The high-reliability performance of K-band MMIC amplifiers fabricated using 0.1 /spl mu/m T-gate InGaAs/InAlAs/InP HEMTs on 3-inch wafers using a high volume production process is reported. Operating at an accelerated life test condition of V/sub ds/=1.2 V and I/sub ds/=150 mA/mm, two-stage balanced amplifiers were life tested at three temperatures (T/sub 1/=215/spl deg/C, T/sub 2/=230/spl deg/C and T/sub 3/=250/spl deg/C) in a N/sub 2/ ambient. The activation energy (E/sub a/) is as high as 2 eV, achieving a projected median-time-to-failure (MTF) >1/spl times/10/sup 8/ hours at a 125/spl deg/C junction temperature. MTF was determined by 3-temperature constant current stress using | /spl Delta/S21 | >1.0 dB as the failure criteria. This is the first demonstration of 3-temperature high reliability 0.1 /spl mu/m InGaAs/InAlAs/InP HEMT based on small-signal microwave characteristics of HEMT MMIC. This result demonstrates a robust InGaAs/InAlAs/InP HEMT production technology.

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在3英寸InP生产工艺上实现0.1 /spl mu/m InGaAs/InAlAs/InP HEMT mmic的高可靠性

本文报道了在3英寸晶圆上采用0.1 /spl mu/m t栅InGaAs/InAlAs/InP hemt制备的k波段MMIC放大器的高可靠性性能。在V/sub /=1.2 V, I/sub /=150 mA/mm的加速寿命测试条件下，在N/sub /环境中，对两级平衡放大器进行了三种温度(T/sub 1/=215/spl度/C, T/sub /=230/spl度/C和T/sub /=250/spl度/C)的寿命测试。活化能(E/sub / a/)高达2 eV，在125/spl℃的结温下，实现了预计的中失效时间(MTF) bb0.1 /spl次/10/sup 8/小时。以| /spl Delta/S21 | >1.0 dB为失效准则，采用3℃恒流应力法测定MTF。这是基于HEMT MMIC小信号微波特性的3温高可靠性0.1 /spl mu/m InGaAs/InAlAs/InP HEMT的首次演示。这一结果证明了一种强大的InGaAs/InAlAs/InP HEMT生产技术。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)

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