DC SST MF Transformer Partial Discharge Characteristics Study with High dV/dT PWM Switching Transients of SiC Devices

R. Agarwal, Hui Li, Zhehui Guo, P. Cheetham
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引用次数: 2

Abstract

Tightly packed medium frequency (MF) transformer windings carrying PWM voltages are prone to partial discharges due to its proximity to adjacent conductor and continuously alternating electric fields between the conductors. In addition, for SiC based DC SST applying phase-shift modulation, a peak-potential state is generated between the adjacent primary and secondary winding conductors for the duration of phase shift. This magnified stress on insulation system gives rise to premature inception of partial discharges leading to sooner than predicted MF transformer failure. This paper presents a non-intrusive PD detection strategy for a PWM voltages using high speed optical sensors for foil-type transformers to detect partial discharges in MF transformer's inter-winding insulation at PWM voltages containing high dv/dt switching transients due to SiC devices. PD inception and extinction characteristics are experimentally obtained in the lab using a hardware consisting of 3.3 kV SiC MOSFETs that generates PWM voltages with dv/dt up to 60 V/ns and switching frequency up to 50 kHz on foil winding specimens.
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SiC器件高dV/dT PWM开关瞬态下直流SST中频变压器局部放电特性研究
承载PWM电压的紧凑中频(MF)变压器绕组由于靠近相邻导体和导体之间持续交变的电场,容易发生局部放电。此外,对于应用移相调制的SiC基直流SST,在移相期间,相邻的初级和次级绕组导体之间会产生峰电位状态。这种对绝缘系统的放大应力导致局部放电的过早开始,导致中频变压器的故障比预期的要早。本文提出了一种针对PWM电压的非侵入式PD检测策略,该策略使用高速光学传感器用于箔型变压器,以检测在PWM电压下中频变压器绕组间绝缘的局部放电,其中包含由SiC器件引起的高dv/dt开关瞬态。在实验室中,使用由3.3 kV SiC mosfet组成的硬件,实验获得了PD的起始和消光特性,该硬件在箔绕组样品上产生dv/dt高达60 V/ns的PWM电压,开关频率高达50 kHz。
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