Local-property analysis for modeling of gate insulator materials

Abstract

We have constructed fundamental theories for electronic properties and dielectric breakdown of gate insulator materials in nano-CMOS devices based on the Rigged QED theory and the regional density functional theory. Simulations about dielectric properties and reliability due to these theories have been carried out for SiO₂, ZrO₂, HfO₂, Zr_xSi_1-xO₂, Hf_xSi_1-xO₂, Gd_xO_y, La_xO_y, and SiO_xN_y through the modeling of nano-CMOS system such as crystal and amorphous thin films. Furthermore, we have reported development of the nucleus-electron multiple dynamics program codes following the Rigged QED theory.