Hongyu Li, W. Seit, Hwang Gilho, P. Zhao, J. Tao, C. S. Tan
{"title":"Low Cost Grounding Integration for Surface Ion Trap","authors":"Hongyu Li, W. Seit, Hwang Gilho, P. Zhao, J. Tao, C. S. Tan","doi":"10.1109/ECTC32696.2021.00259","DOIUrl":null,"url":null,"abstract":"Si substrate provide the integration platform for surface ion trap device fabrication. Grounding metal for the surface ion trap is necessary because of high RF voltage ($> 100\\mathrm{V}$) applied and lower RF loss required within functionality. High resistivity Si substrate with floating metal grounding and low-grade Si substrate with connected grounding metal were integrated with surface ion trap. Ion trap resonance curves were observed at 47.1 MHz frequency for ion trap devices with different grounding metal. The curves have similar resonant power.","PeriodicalId":351817,"journal":{"name":"2021 IEEE 71st Electronic Components and Technology Conference (ECTC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2021-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE 71st Electronic Components and Technology Conference (ECTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECTC32696.2021.00259","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Si substrate provide the integration platform for surface ion trap device fabrication. Grounding metal for the surface ion trap is necessary because of high RF voltage ($> 100\mathrm{V}$) applied and lower RF loss required within functionality. High resistivity Si substrate with floating metal grounding and low-grade Si substrate with connected grounding metal were integrated with surface ion trap. Ion trap resonance curves were observed at 47.1 MHz frequency for ion trap devices with different grounding metal. The curves have similar resonant power.