{"title":"Scale length determination of Gate all around (Octagonal cross section) Junctionless Transistor","authors":"K. Sarma, Santanu Sharma","doi":"10.1109/EDCAV.2015.7060528","DOIUrl":null,"url":null,"abstract":"A method for scale length determination of Gate all around (Octagonal cross section) Junctionless Transistor is reported in this paper. The scale length expression is obtained by solving the 3D Poisson's equation. Variation of scale length with gate oxide thickness, side length of octagon and dielectric constant is shown. The Transverse and central electrostatic potential profile is also shown for different values of gate oxide thickness, side length of octagon, Channel length and Drain voltage and Gate Voltage are shown. Longitudinal electric field profile for different value of drain voltage is also shown. The scale length value decreases linearly with decreasing gate oxide thickness and side length of octagon and decreases nonlinearly with increasing dielectric constant.","PeriodicalId":277103,"journal":{"name":"2015 International Conference on Electronic Design, Computer Networks & Automated Verification (EDCAV)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 International Conference on Electronic Design, Computer Networks & Automated Verification (EDCAV)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDCAV.2015.7060528","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A method for scale length determination of Gate all around (Octagonal cross section) Junctionless Transistor is reported in this paper. The scale length expression is obtained by solving the 3D Poisson's equation. Variation of scale length with gate oxide thickness, side length of octagon and dielectric constant is shown. The Transverse and central electrostatic potential profile is also shown for different values of gate oxide thickness, side length of octagon, Channel length and Drain voltage and Gate Voltage are shown. Longitudinal electric field profile for different value of drain voltage is also shown. The scale length value decreases linearly with decreasing gate oxide thickness and side length of octagon and decreases nonlinearly with increasing dielectric constant.
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