Some improvements in the design of LDMOSFET power amplifier for effectively suppressing metallic shielding cover (MSC) effects

Liang Lin, Liang Zhou, Binghui Zhang, Gangfeng Wu, W. Yin, J. Mao
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Abstract

Some improvements in the design of LDMOSFET power amplifier (PA) are demonstrated for effectively suppressing metallic shielding cover (MSC) effects. The internal and outer matching structures on the PCB are at first simulated and optimized using the commercial full-wave software HFSS. Further, they are integrated with the lumped-element circuit model of die and co-simulated using the software ADS 2013. With an Automation Testing Bench employed, the input-output responses of the realized PA modules are measured and compared. An improved design of the LDMOSFET die is also presented and validated. This research can provide some useful guidelines for the development of PA modules with high performance.
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为有效抑制金属屏蔽盖效应,对LDMOSFET功率放大器的设计进行了改进
本文对LDMOSFET功率放大器(PA)的设计进行了改进,以有效地抑制金属屏蔽罩(MSC)效应。首先利用商用全波软件HFSS对PCB上的内外匹配结构进行了仿真和优化。此外,将其与模具集总元电路模型集成,并使用ADS 2013软件进行联合仿真。利用自动化测试台架,对实现的PA模块的输入输出响应进行了测量和比较。提出并验证了一种改进的LDMOSFET芯片设计。本文的研究为高性能PA模块的开发提供了有益的指导。
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