G. van der Bent, A. P. de Hek, F. V. van Vliet, Z. Ouarch
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引用次数: 5
Abstract
A 100 W single chip GaN HPA for radar applications is designed, manufactured and measured. This HPA delivers a peak output power of 107 W at a PAE of more than 55 %. The operational frequency band of the HPA is from 2.9 GHz to 3.4 GHz. High quality non-linear transistor models and advanced simulations of RF performance, amplifier stability and thermal behaviour have led to a first-time-right design.
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