Design for Testability: The Path to Deep Submicron

T. Williams
{"title":"Design for Testability: The Path to Deep Submicron","authors":"T. Williams","doi":"10.1109/ATS.2005.48","DOIUrl":null,"url":null,"abstract":"Design has never been simple, but at 130 nm and below, and definitely at 90 nm, it is becoming increasingly difficult. Process and lithography issues continue to drive our advance to new technology nodes. Due to the effects of scaling, defect mechanisms are no longer easily identified with single \"stuck at\" fault models but rather are demanding far more complex and challenging solutions. For example, shorts are now being extracted from the physical layout of a design, with special tests being created to detect them. But this is just the beginning; delay testing of all transition faults is now a new objective of design for testability (DFT). New demands are being made on design to not only create the correct function and help with testing but also to help yield ramp-up. The areas of design for manufacturing (DFM) and design for yield (DFY) are now also talking hold as new requirements for design. Manufacturing and test are beginning to develop an even stronger relationship due to the close interconnection between yield ramp-up and diagnostics, which are supported by DFT structures included in the design","PeriodicalId":373563,"journal":{"name":"14th Asian Test Symposium (ATS'05)","volume":"673 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"14th Asian Test Symposium (ATS'05)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ATS.2005.48","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

Design has never been simple, but at 130 nm and below, and definitely at 90 nm, it is becoming increasingly difficult. Process and lithography issues continue to drive our advance to new technology nodes. Due to the effects of scaling, defect mechanisms are no longer easily identified with single "stuck at" fault models but rather are demanding far more complex and challenging solutions. For example, shorts are now being extracted from the physical layout of a design, with special tests being created to detect them. But this is just the beginning; delay testing of all transition faults is now a new objective of design for testability (DFT). New demands are being made on design to not only create the correct function and help with testing but also to help yield ramp-up. The areas of design for manufacturing (DFM) and design for yield (DFY) are now also talking hold as new requirements for design. Manufacturing and test are beginning to develop an even stronger relationship due to the close interconnection between yield ramp-up and diagnostics, which are supported by DFT structures included in the design
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可测试性设计:通往深亚微米的道路
设计从来都不简单,但在130纳米及以下,尤其是90纳米的情况下,设计变得越来越困难。工艺和光刻问题继续推动我们向新技术节点前进。由于缩放的影响,缺陷机制不再容易被单一的“卡在”故障模型上,而是需要更复杂和更具挑战性的解决方案。例如,现在从设计的物理布局中提取出短裤,并创建特殊测试来检测它们。但这仅仅是个开始;所有转换故障的延迟测试是可测试性设计(DFT)的一个新目标。人们对设计提出了新的要求,不仅要创造正确的功能,帮助进行测试,还要帮助提高产量。面向制造的设计(DFM)和面向良率的设计(DFY)领域现在也被认为是设计的新要求。由于产量提升和诊断之间的紧密联系,制造和测试开始发展更紧密的关系,这是由设计中包含的DFT结构支持的
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