Static and LFN/RTN Local and Global Variability Analysis Using an Addressable Array Test Structure

Owen Gauthier, S. Haendler, Ronan Beucher, P. Scheer, Q. Rafhay, C. Theodorou
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Abstract

The use of an addressable array test structure designed on a 28 nm FD-SOI technology for the variability analysis of static, low frequency noise (LFN) and Random Telegraph Noise (RTN) matching is presented. The experimental setup was validated, and a statistical analysis of the above electrical quantities is provided. Using such structures, combined with a switching matrix, local and global variability analysis can be performed while significantly increasing the number of samples, thus enabling a better description of the variations in LFN and RTN, especially when RTN signatures can be scarce. We show that local variations dominate the noise variability compared to global variations.
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使用可寻址阵列测试结构的静态和LFN/RTN局部和全局可变性分析
提出了基于28 nm FD-SOI技术设计的可寻址阵列测试结构,用于静态、低频噪声(LFN)和随机电报噪声(RTN)匹配的可变性分析。对实验设置进行了验证,并对上述电量进行了统计分析。使用这种结构,结合切换矩阵,可以在显著增加样本数量的同时进行局部和全局变异性分析,从而能够更好地描述LFN和RTN的变化,特别是当RTN特征稀缺时。我们发现,与全球变化相比,局部变化主导着噪声变异性。
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