{"title":"Specific features of SiC-IGBT with 13kV switching","authors":"M. Ueno, M. Miyake, M. Miura-Mattausch","doi":"10.1109/ISPSD.2012.6229073","DOIUrl":null,"url":null,"abstract":"Switching behavior of a 4H-SiC IGBT is discussed considering the punch-through effect of the base layer. The switching behavior is investigated with a mixed-mode simulation of a 2D-numerical device simulator, where extremely abrupt switching characteristics are observed at voltage ratings of 6.5kV and 13kV. The origin is explained by the carrier dynamics under the punch-through condition. As a proof of this explanation, the switching behaviors are reproduced by circuit simulation with the compact IGBT model HiSIM-IGBT, where the punch-through behavior is considered.","PeriodicalId":371298,"journal":{"name":"2012 24th International Symposium on Power Semiconductor Devices and ICs","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 24th International Symposium on Power Semiconductor Devices and ICs","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2012.6229073","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
Switching behavior of a 4H-SiC IGBT is discussed considering the punch-through effect of the base layer. The switching behavior is investigated with a mixed-mode simulation of a 2D-numerical device simulator, where extremely abrupt switching characteristics are observed at voltage ratings of 6.5kV and 13kV. The origin is explained by the carrier dynamics under the punch-through condition. As a proof of this explanation, the switching behaviors are reproduced by circuit simulation with the compact IGBT model HiSIM-IGBT, where the punch-through behavior is considered.
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